Solution processable bilayered gate dielectric towards flexible organic thin film transistors

In this study, we have successfully explored the potential of a new bilayer gate dielectric material, composed of Polystyrene (PS), Pluronic P123 Block Copolymer Surfactant (P123) composite thin film and Polyacrylonitrile (PAN) through fabrication of metal insulator metal (MIM) capacitor devices and organic thin film transistors (OTFTs). The conditions for fabrication of PAN and PS-P123 as a bilayer dielectric material are optimized before employing it further as a gate dielectric in OTFTs. Simple solution processable techniques are applied to deposit PAN and PS-P123 as a bilayer dielectric layer on Polyimide (PI) substrates. Contact angle study is further performed to explore the surface property of this bilayer polymer gate dielectric material. This new bilayer dielectric having a k value of 3.7 intermediate to that of PS-P123 composite thin film dielectric (k ∼ 2.8) and PAN dielectric (k ∼ 5.5) has successfully acted as a buffer layer by preventing the direct contact between the organic semiconducting layer and high k PAN dielectric. The OTFT devices based on α,ω-dihexylquaterthiophene (DH4T) incorporated with this bilayer dielectric, has demonstrated a hole mobility of 1.37 × 10⁻² and on/off current ratio of 10³ which is one of the good values as reported before. Several bending conditions are applied, to explore the charge carrier hopping mechanism involved in deterioration of electrical properties of these OTFTs. Additionally, the electrical performance of OTFTs, which are exposed to open atmosphere for five days, can be interestingly recovered by means of re-baking them respectively at 90 °C.     

Transparent,Stimuli‐Responsive Films from Cellulose‐Based Organogel Nanoparticles

The use of bio‐based nanoscaled cellulose for the construction of novel functional materials has progressed rapidly over the past years. In comparison to most of studies starting with the hydrophilic nanoscaled cellulose, surface‐stearoylated cellulose nanoparticles (SS‐CNPs) are used in this report for the construction of multifunctional, responsive films. SS‐CNPs with an average size of 115 ± 0.5 nm are obtained after the surface‐modification of cellulose under heterogeneous conditions. Crystalline cellulose core is present within SS‐CNPs according to solid‐state ¹³C nuclear magnetic resonance (NMR) spectroscopy. SS‐CNPs show excellent dispersibility in nonpolar solvents and form temperature‐responsive organogels in tetrahydrofuran (THF) at low temperature or after long time storage at room temperature. Moreover, transparent and self‐standing films of SS‐CNPs from their THF‐suspension show solvent‐responsive surface wettability and responsive shape‐memory property. SS‐CNPs can also be used for the fabrication of nanocomposite films together with nonpolar compounds, such as (2‐stearoylaminoethyl) rhodamine B. Thus, these novel SS‐CNPs derived from sustainable cellulose fibers are promising candidates for the construction of novel functional materials.     

High‐Mobility ZnO Thin Film Transistors Based on Solution‐processed Hafnium Oxide Gate Dielectrics

The properties of metal oxides with high dielectric constant (k) are being extensively studied for use as gate dielectric alternatives to silicon dioxide (SiO₂). Despite their attractive properties, these high‐k dielectrics are usually manufactured using costly vacuum‐based techniques. In that respect, recent research has been focused on the development of alternative deposition methods based on solution‐processable metal oxides. Here, the application of the spray pyrolysis (SP) technique for processing high‐quality hafnium oxide (HfO₂) gate dielectrics and their implementation in thin film transistors employing spray‐coated zinc oxide (ZnO) semiconducting channels are reported. The films are studied by means of admittance spectroscopy, atomic force microscopy, X‐ray diffraction, UV–Visible absorption spectroscopy, FTIR, spectroscopic ellipsometry, and field‐effect measurements. Analyses reveal polycrystalline HfO₂ layers of monoclinic structure that exhibit wide band gap (≈5.7 eV), low roughness (≈0.8 nm), high dielectric constant (k ≈ 18.8), and high breakdown voltage (≈2.7 MV/cm). Thin film transistors based on HfO₂/ZnO stacks exhibit excellent electron transport characteristics with low operating voltages (≈6 V), high on/off current modulation ratio (～10⁷) and electron mobility in excess of 40 cm² V^?1 s^?1.     

Molecular‐Scale Hybridization of Clay Monolayers and Conducting Polymer for Thin‐Film Supercapacitors

Development of electrode materials with well‐defined architectures is a fruitful and profitable approach for achieving highly‐efficient energy storage systems. A molecular‐scale hybrid system is presented based on the self‐assembly of CoNi‐layered double hydroxide (CoNi‐LDH) monolayers and the conducting polymer (poly(3,4‐ethylene dioxythiophene):poly(styrene sulfonate), denoted as PEDOT:PSS) into an alternating‐layer superlattice. Owing to the homogeneous interface and intimate interaction, the resulting CoNi‐LDH/PEDOT:PSS hybrid materials possess a simultaneous enhancement in ion and charge‐carrier transport and exhibit improved capacitive properties with a high specific capacitance (960 F g^–1 at 2 A g^–1) and excellent rate capability (83.7% retention at 30 A g^–1). In addition, an in‐plane supercapacitor device with an interdigital design is fabricated based on a CoNi‐LDH/PEDOT:PSS thin film, delivering a significantly enhanced energy and power output (an energy density of 46.1 Wh kg^–1 at 11.9 kW kg^–1). Its application in miniaturized devices is further demonstrated by successfully driving a photodetector. These characteristics demonstrate that the molecular‐scale assembly of LDH monolayers and the conducting polymer is promising for energy storage and conversion applications in miniaturized electronics.     

A Surface Tailoring Method of Ultrathin Polymer Gate Dielectrics for Organic Transistors: Improved Device Performance and the Thermal Stability Thereof

Tailoring the surface of the dielectric layer is of critical importance to form a good interface with the following channel layer for organic thin film transistors (OTFTs). Here, a simple surface treatment method is applied onto an ultrathin (<15 nm) organosilicon‐based dielectric layer via the initiated chemical vapor deposition (iCVD) to make it compatible with organic semiconductors without degrading its insulating property. A molecular‐thin oxide capping layer is formed on a 15 nm thick poly(1,3,5‐trimetyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) by a brief oxygen plasma treatment. The capping layer greatly enhances the thermal stability of the dielectrics, without degrading the original mechanical flexibility and insulating performance of the dielectrics. Moreover, the surface silanol functionalities formed by the plasma treatment can also be utilized for the surface modification with silane compounds. The surface‐modified dielectrics are applied to fabricate low‐voltage operating (<5 V) pentacene‐based OTFTs. The highest field‐effect mobility of the device with the surface‐treated 15 nm thick pV3D3 is 0.59 cm² V^?1 s^?1, which is improved up to two times compared to the TFT with the pristine pV3D3. It is believed that the simple surface treatment method can widely extend the applicability of the highly robust, ultrathin, and flexible pV3D3 gate dielectrics to design the surface of the dielectrics to match well various kinds of organic semiconductors.     

Organic Tribotronic Transistor for Contact‐Electrification‐Gated Light‐Emitting Diode

Tribotronics is a new field about the devices fabricated using the electrostatic potential created by contact electrification as a “gate” voltage to tune/control charge carrier transport in semiconductors. In this paper, an organic tribotronic transistor is proposed by coupling an organic thin film transistor (OTFT) and a triboelectric nanogenerator (TENG) in vertical contact‐separation mode. Instead of using the traditional gate voltage for controlling, the charge carrier transportation in the OTFT can be modulated by the contact‐induced electrostatic potential of the TENG. By further coupling with an organic light‐emitting diode, a contact‐electrification‐gated light‐emitting diode (CG‐LED) is fabricated, in which the operating current and light‐emission intensity can be tuned/controlled by an external force–induced contact electrification. Two different modes of the CG‐LED have been demonstrated and the brightness can be decreased and increased by the applied physical contact, respectively. Different from the conventional organic light‐emitting transistor controlled by an electrical signal, the CG‐LED has realized the direct interaction between the external environment/stimuli and the electroluminescence device. By introducing optoelectronics into tribotronics, the CG‐LED has open up a new field of tribophototronics with many potential applications in interactive display, mechanical imaging, micro‐opto‐electro‐mechanical systems, and flexible/touch optoelectronics.     

复合纳米碳化硅包芯线蠕墨铸铁孕育及其效果分析

采用喂线法对蠕墨铸铁进行蠕化及孕育处理,分析了纳米SiC、微米SiC,以及纳米SiC含量(质量分数)为1%、10%、20%的复合纳米SiC孕育线对蠕墨铸铁的孕育效果。试验结果表明:复合纳米SiC孕育剂的孕育效果优于纯纳米SiC和纯微米SiC孕育剂,当加入量为0.05%时,含10%纳米碳化硅的复合纳米碳化硅对蠕墨铸铁的孕育效果最佳。     

Ti-50Ni钎焊TZM与ZrCp-W接头界面组织及性能

采用Ti-50Ni(at%)钎料实现了TZM合金与ZrC_p-W复合材料的真空钎焊连接,通过SEM、EDS、XRD等方法分析了接头界面的微观组织结构,研究了钎焊温度对TZM/Ti-50Ni/ZrC_p-W接头界面组织及性能的影响。结果表明:钎焊接头的典型界面结构为TZM/Ti-Mo+TiNi_3+Mo-Ti-W/Ti Ni+TiNi_3+W(s,s)+(Ti,Zr)C/ZrC_p-W。随着钎焊温度的升高,Ti-Mo固溶体层宽度逐渐增大,线状条纹增多、增宽,组织逐渐粗大,晶界变圆滑;接头的抗剪强度随钎焊温度升高先升高后降低,当钎焊温度为1340℃,保温10 min时,接头获得最大抗剪强度为146 MPa。